Description

This doctoral research focuses on the multi-physics modeling and optimization of III-V semiconductor components (GaN, GaAs) for 5G and future 6G networks. To achieve high energy efficiency (100 Gbits/J) and THz frequencies, the project utilizes a Monte Carlo solver to simulate nanometric effects such as ballistic transport, 2DEG formation, and self-heating (hot spots). The objectives of this doctoral work are: optimizing solver performance via Python/C++/Fortran, integrating electromagnetic parasitics (from HFSS/Q2D) into the simulator, developing an experimental testbed up to 110 GHz to validate the simulation workflow and designing innovative RF detectors.

Skills required

The candidate profile required for the project is a young professional holding a master’s degree in Electrical or Electronics Engineering, interested in the scientific field of microwaves technologies. He/She must be motivated, passionate about research in a multidisciplinary field and an organized person using scientific methods. He/She must justify good academic tracks in maths and applied physics; an experience in programming; linguistic competence in English (C1 written and spoken).

Bibliography

[Liu2026] R. Liu, H. Jia, et al., 'A Hybrid-Biased Dual-Band GaN MMIC Doherty Power Amplifier for 6G FR3', in IEEE Transactions on Microwave Theory and Techniques, vol. 74, no. 2, pp. 1507-1519, Feb. 2026. doi: 10.1109/TMTT.2025.3634158
[Artillan 2024] P. Artillan, I. Íñiguez-De-La-Torre, G. Paz-Martínez, E. Rochefeuille, S. García-Sánchez, T. González, J. Mateos. Multiport square law detectors: responsivity matrix model and direct determination of the optimum injection regime. IEEE Transactions on Microwave Theory and Techniques, Vol. 72, issue 10, pp. 6044-6048, 2024. doi: 10.1109/TMTT.2024.3390834
[Garcia2025] S. García-Sánchez et al. Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight. Journal of Applied Physics, 138(9), 2025.
[Mateos2004] J. Mateos López, T. González Sánchez, D. Pardo Collantes, S. Bollaert, T. Parenty, A. Cappy. Design optimization of AlInAs GaInAs HEMTs for high-frequency applications. IEEE Transactions on Electron Devices, vol. 51, no. 4, pp. 521-528, April 2004. doi: 10.1109/TED.2004.823799
[Sanchez2022] H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, T. González. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs. Solid-State Electronics, 193, 108289, 2022. doi: 10.1016/j.sse.2022.108289
[Garcia2026] S. García-Sánchez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, P. Artillan, T. González, J. Mateos. Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, vol. 73, no. 4, pp. 2474-2477, April 2026, doi: 10.1109/TED.2026.3662300

Keywords

RF detector, EM solver, Monte-Carlo, HEMT, Schottky