Description

Dark-field X-ray microscopy (DFXM) is an emerging, non-destructive synchrotron technique capable of imaging strain and crystalline defects with 30–100 nm resolution over large fields of view. Recent upgrades at the ESRF and the ID03 beamline have increased X-ray intensity by two orders of magnitude, enabling investigation of the most challenging nanoscale structures produced in cleanroom environments. This PhD aims to exploit DFXM for the analysis of advanced microelectronic architectures subjected to critical thermo-mechanical stress. DFXM will provide 3D mapping of strain, orientation and buried defects in complex devices without sample destruction. A comparative study will be performed against complementary local X-ray techniques also available at synchrotron facilities such as Laue microdiffraction and scanning X-ray diffraction microscopy. Multi-scale correlations will be established with TEM and Raman spectroscopy. Finite-element simulations will support interpretation by modelling the mechanical behavior under thermal or operational loads. The objective is to define a robust methodology for multiscale strain analysis in microelectronics devices. This PhD will take place at the CEA–Leti on the Nanocharacterization platform and is embedded in a strong ESRF@ID03 collaboration and supports advances in quantum technologies, photonics and energy-efficient microelectronics. This work will contribute to improved reliability and design optimization of next-generation devices.