CF202648349
Junction defect characterization of low therMal Budget SOI MoSFET
D-97
Doctorate Full Doctorate
Disciplines
Laboratory
Laboratoire des Transistors Avancés Département Composants Silicium (LETI)
Host institution
UNIVERSITE GRENOBLE ALPES
Doctoral school
Electronics, Electrotechnics, Automatics, Signal treatment - ED 220

Description

Join CEA-Leti and CROMA to analyze in depth junctions of a new technology. Indeed, our transistors are fabricated under restricted thermal budget for 3D sequential integration, making dopants activation very challenging! Our team will support you technically and scientifically to conduct this work. Some data are already available and waiting for your analysis. During this PhD, you will have the opportunity to perform all theses steps: From the idea (simulation, bibliography, TCAD) 20% Processes understanding (implantation, SPER) 10% Integration & cleanroom fabrication management 10% Characterization (physical & electrical: noise, DLTS…) 50% Valorization (presentations, article) 10% This PhD offers a unique chance to be at the forefront of technological innovation and to make a significant impact in the field of advanced SOI. Join us and take the first step towards an exciting career in research and development! With a background in microelectronics or nanotechnologies, you are curious about integration of new processes, not afraid about equations and liked semiconductors classes at school. You want to solve complex puzzles and enjoy collaborating with others to figure out innovative solutions.

Funded offer

Funding type
CEA

Dates

Application deadline 30/11/26

Duration36 months

Start date01/10/26

Creation date22/04/26

Languages

Level of french requiredNone

Level of English requiredNone

Opportunity to make his thesis in English

Miscellaneous

Annual tuition fee391 € / year

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